EXICON ECW20N20 Transistor MOSFET

Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design.
Average votes for this product
4.0 / 5

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Reference : 17658
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Shipping date: 22-11-2024.

Orders placed before 12h (GMT+1) will generally be shipped the same day (working day).

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2 Years warranty

Accessories for this product

Find here a selection of useful and/or essential accessories for this product. These are specially selected by the Audiophonics team according to the characteristics of the product.

 
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EXICON ECW20N20

Transistor MOSFET

EXICON ECW20N20 Transistor MOSFET

Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design. Their operating and thermal stability makes them extremely reliable and eliminates the need for a protection circuit. These advantages, combined with high bandwidth, low power requirements and easy paralleling, make it easy to build robust amplifiers with excellent sound characteristics.

The EXC10N20 has great performance:

  • Specifically designed for audio amplification applications.
  • High thermal conductivity.
  • Excellent frequency characteristics.
  • Built-in protection diode.
  • No current concentration, for a high resistance to electrical destruction.
  • Thermal characteristics protecting against short circuits and thermal runaway.
  • Complementary to the ECW20P20 model
EXICON ECW20N20 Transistor MOSFET

Technical characteristics

Specifications
Product typeMOSFET
Number of pins3
PackageTO 264
maximum ratings (Tc = 25°C)
Drain-Source voltage (Vdss)200V
Gate-Source voltage (Vgss)+/-14V
Continuous drain current (Id)16A
Body drain diode current (Idr)16A
Allowable power dissipation * Tcase=25°C (Pd)250W
Channel temperature(Tch)150°C
Storage temperature range (Tstg)-55°C à 150°C
Electrical characteristics (TC = 25°C)
SymbolParametersTest conditionsMin.Typ.Max.
BVdsxDrain-Source breakdown voltageVgs = -10V
Id = 10mA
200V--
Vgs(off)Gate-Source cut-off voltageVds = 10V
Id = 100mA
0.1V-1.5V
Vds(sat)Drain-Source saturation voltageVgd = 0
Id = 16A
--12V
IdsxDrain-Source cut-off currentVgs = -10V
Vds = 200V
--10mA
Dynamic characteristics
SymbolParametersTest conditionsMin.Typ.Max.
CissInput capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-900pF-
CossOutput capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-500pF-
CrssReverse transfer capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-16pF-
TonTurn-on timeVds = 20V / Id = 7A-155ns-
ToffTurn-off timeVds = 20V / Id = 7A-90ns-
EXICON ECW20N20 Transistor MOSFET
 
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Average votes
4.0 / 5
1 reviews
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 4/5
Date :
No anti-static packaging!
Exicon lateral MOSFETs are true audiophile parts, not available at many vendors. It is great that Audiophonics has added them to the stock.

They arrived in the paper box with more than enough of paper and bubble wrap for protection. After unwrapping ample protection, there was a real shocker. They were packed in a plain plastic bag.

MOSFETs are parts highly sensitive to any electrostatic discharge. Even 20 V between two specific pins can damage them. They should be packed in the ESD safe bags meant for electronic components and handled following ESD safe procedures.

Warehouse personnel should be provided with training and required accessories. Thankfully, all received parts check as good.
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EXICON ECW20N20 Transistor MOSFET
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion,...

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