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EXICON ECX10N20 Transistor MOSFET (2SK1058)
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Accessories for this product
Find here a selection of useful and/or essential accessories for this product. These are specially selected by the Audiophonics team according to the characteristics of the product.
Exicon ECX10N20
Transistor MOSFET 2SK1058
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design. Their operating and thermal stability makes them extremely reliable and eliminates the need for a protection circuit. These advantages, combined with high bandwidth, low power requirements and easy paralleling, make it easy to build robust amplifiers with excellent sound characteristics.
The EXC10N20 is an excellent equivalent of the 2SK1058, with improved performance:
- Specifically designed for audio amplification applications.
- High thermal conductivity.
- Excellent frequency characteristics.
- Built-in protection diode.
- No current concentration, for a high resistance to electrical destruction.
- Thermal characteristics protecting against short circuits and thermal runaway.
- Complementary to the EXC10P20 model
Technical characteristics
| Specifications | |
|---|---|
| Product type | MOSFET |
| Number of pins | 3 |
| Package | TO-247 |
| maximum ratings (Tc = 25°C) | |
|---|---|
| Drain-Source voltage (Vdss) | 200V |
| Gate-Source voltage (Vgss) | +/-14V |
| Continuous drain current (Id) | 8A |
| Body drain diode current (Idr) | 8A |
| Allowable power dissipation * Tcase=25°C (Pd) | 125W |
| Channel temperature(Tch) | 150°C |
| Storage temperature range (Tstg) | -55°C à 150°C |
| Electrical characteristics (TC = 25°C) | |||||
|---|---|---|---|---|---|
| Symbol | Parameters | Test conditions | Min. | Typ. | Max. |
| BVdsx | Drain-Source breakdown voltage | Vgs = 10V Id = 10mA | 200V | - | - |
| Vgs(off) | Gate-Source cut-off voltage | Vds = 10V Id = 100mA | 0.15V | - | 1.5V |
| Vds(sat) | Drain-Source saturation voltage | Vgd = 0 Id = 8A | - | - | 10V |
| Idsx | Drain-Source cut-off current | Vgs = 10V Vds = 200V | - | - | 10mA |
| Dynamic characteristics | |||||
|---|---|---|---|---|---|
| Symbol | Parameters | Test conditions | Min. | Typ. | Max. |
| Ciss | Input capacitance | - | - | 500pF | - |
| Coss | Output capacitance | Vgs = 0 | - | 300pF | - |
| Crss | Reverse transfer capacitance | f = 1MHz | - | 10pF | - |
| Ton | Turn-on time | Vds = 20V | - | 100ns | - |
| Toff | Turn-off time | Id = 7A | - | 50ns | - |
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